A Study on Characteristics of HBT Device Parameters

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So far a detailed study on Heterojunction Bipolar Transistor made of Inp/InGaAs with nearly Gaussian Base doping profile, has not been done .Because of that a detailed study on Inp-InGaAs HBT is... This description may be from another edition of this product.

Format:Paperback

Language:English

ISBN:3659417033

ISBN13:9783659417030

Release Date:June 2013

Publisher:LAP Lambert Academic Publishing

Length:56 Pages

Weight:0.21 lbs.

Dimensions:0.1" x 6.0" x 9.0"

Related Subjects

Engineering Technology

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A Study on Characteristics of HBT Device Parameters

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