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Paperback Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor Book
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ISBN: 9811065497

ISBN13: 9789811065491

Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor

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Provides analytical models for lateral electric field and length of velocity saturation region of graphene nanoribbon based field effect transistors (GNR-based FETs)
Discusses an analytical model for the ionization coefficient and breakdown voltage of GNR-based FETs
Presents simulations for GNR-based FETs in terms of breakdown voltage and calculates the maximum operating voltage of the typical GNRFETs at different conditions

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Format: Paperback

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Engineering Technology

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