Single Electron Spin Measurements in Submicron Si MOS-FETs Random Telegraph Signal, Single Electron Spin Resonance

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Presented is our measurements of a single electronic spin in the gate oxide of submicron-size silicon field effect transistors. Defects near the silicon and silicon dioxide interface have profound... This description may be from another edition of this product.

Format:Paperback

Language:English

ISBN:3836493756

ISBN13:9783836493758

Release Date:December 2008

Publisher:VDM Verlag

Length:124 Pages

Weight:0.39 lbs.

Dimensions:0.3" x 6.0" x 9.0"

Related Subjects

Science Science & Math Science & Scientists Science & Technology

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Single Electron Spin Measurements in Submicron Si MOS-FETs Random Telegraph Signal, Single Electron Spin Resonance

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