Stability of IGZO-based Thin-Film Transistor

by John Wager and Ken Hoshino

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Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense... This description may be from another edition of this product.

Format:Paperback

Language:English

ISBN:3838399633

ISBN13:9783838399638

Release Date:September 2010

Publisher:LAP Lambert Academic Publishing

Length:152 Pages

Weight:0.51 lbs.

Dimensions:0.3" x 6.0" x 9.0"

Related Subjects

Engineering Technology

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Stability of IGZO-based Thin-Film Transistor

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